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FDB28N30TM

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FDB28N30TM Image

The FDB28N30TM from onsemi is a MOSFET with Continous Drain Current 28 A, Drain Source Resistance 129 milliohm, Drain Source Breakdown Voltage 300 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 5 V. Tags: Surface Mount. More details for FDB28N30TM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDB28N30TM
  • Manufacturer
    onsemi
  • Description
    300 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    28 A
  • Drain Source Resistance
    129 milliohm
  • Drain Source Breakdown Voltage
    300 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    39 to 50 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-3 / TO-263-2
  • Applications
    Uninterruptible Power Supply, AC-DC Power Supply

Technical Documents
View details on the manufacturer's website
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