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FDB3632

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FDB3632 Image

The FDB3632 from onsemi is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 9 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDB3632 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDB3632
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    9 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    84 to 110 nC
  • Power Dissipation
    310 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-3 / TO-263-2
  • Applications
    Synchronous Rectification, Battery Protection Circuit, Motor Drives and Uninterruptible Power Supplies, Micro Solar Inverter

Technical Documents
View details on the manufacturer's website
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