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FDB86102LZ

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FDB86102LZ Image

The FDB86102LZ from onsemi is a MOSFET with Continous Drain Current 30 A, Drain Source Resistance 24 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 V. Tags: Surface Mount. More details for FDB86102LZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDB86102LZ
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    30 A
  • Drain Source Resistance
    24 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    15.2 to 21 nC
  • Power Dissipation
    3.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D2PAK-3 / TO-263-2
  • Applications
    DC-DC Conversion, Inverter, Synchronics Rectifier

Technical Documents
View details on the manufacturer's website
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