FDBL86210-F085

Note : Your request will be directed to onsemi.

The FDBL86210-F085 from onsemi is a MOSFET with Continous Drain Current 169 A, Drain Source Resistance 5 to 17.5 milli-ohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for FDBL86210-F085 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDBL86210-F085
  • Manufacturer
    onsemi
  • Description
    150 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    169 A
  • Drain Source Resistance
    5 to 17.5 milli-ohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    70 to 90 nC
  • Power Dissipation
    500 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Automotive, Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    H-PSOF8L
  • Applications
    Automotive Engine Control, Powertrain Management, Solenoid and Motor Drivers, Integrated Starter/alternator, Primary Switch for 12V Systems

Technical Documents

Latest MOSFETs

View more products