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FDC5661N-F085

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The FDC5661N-F085 from onsemi is a MOSFET with Continous Drain Current 4.3 A, Drain Source Resistance 38 to 86 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for FDC5661N-F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDC5661N-F085
  • Manufacturer
    onsemi
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4.3 A
  • Drain Source Resistance
    38 to 86 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    14.5 to 19 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOT23-6
  • Applications
    Automotive, DC–DC Converter, Motor Drives

Technical Documents
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