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FDC658P

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FDC658P Image

The FDC658P from onsemi is a MOSFET with Continous Drain Current -4 A, Drain Source Resistance 50 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 V. Tags: Surface Mount. More details for FDC658P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDC658P
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -4 A
  • Drain Source Resistance
    50 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 V
  • Gate Charge
    8 to 12 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOT-23-6

Technical Documents
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