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FDC855N

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FDC855N Image

The FDC855N from onsemi is a MOSFET with Continous Drain Current 6.1 A, Drain Source Resistance 27 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 V. Tags: Surface Mount. More details for FDC855N can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDC855N
  • Manufacturer
    onsemi
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.1 A
  • Drain Source Resistance
    27 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    4.9 to 13 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    TSOT-23-6
  • Applications
    Power Management, Hard disk drive

Technical Documents
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