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FDD2670

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FDD2670 Image

The FDD2670 from onsemi is a MOSFET with Continous Drain Current 3.6 A, Drain Source Resistance 130 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4.5 V. Tags: Surface Mount. More details for FDD2670 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDD2670
  • Manufacturer
    onsemi
  • Description
    200 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.6 A
  • Drain Source Resistance
    130 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4.5 V
  • Gate Charge
    27 to 43 nC
  • Power Dissipation
    70 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3

Technical Documents
View details on the manufacturer's website
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