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FDD4N60NZ

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FDD4N60NZ Image

The FDD4N60NZ from onsemi is a MOSFET with Continous Drain Current 3.4 A, Drain Source Resistance 2500 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 5 V. Tags: Surface Mount. More details for FDD4N60NZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDD4N60NZ
  • Manufacturer
    onsemi
  • Description
    600 V, N-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    3.4 A
  • Drain Source Resistance
    2500 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    3.7 to 5 nC
  • Power Dissipation
    114 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    LED TV, Consumer Appliances, Uninterruptible Power Supply

Technical Documents
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