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FDD5N60NZTM

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The FDD5N60NZTM from onsemi is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 1650 to 2000 milli-ohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Surface Mount. More details for FDD5N60NZTM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDD5N60NZTM
  • Manufacturer
    onsemi
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    1650 to 2000 milli-ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    10 to 13 nC
  • Power Dissipation
    83 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D-PAK
  • Applications
    LCD/LED/PDP TV, Lighting, Uninterruptible Power Supply

Technical Documents
View details on the manufacturer's website
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