1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FDD6670A

FDD6670A

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

FDD6670A Image

The FDD6670A from onsemi is a MOSFET with Continous Drain Current 66 A, Drain Source Resistance 8 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 V. Tags: Surface Mount. More details for FDD6670A can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDD6670A
  • Manufacturer
    onsemi
  • Description
    30 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    66 A
  • Drain Source Resistance
    8 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    16 to 22 nC
  • Power Dissipation
    63 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    DC/DC converter, Motor drives

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products