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FDD7N25LZTM

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The FDD7N25LZTM from onsemi is a MOSFET with Continous Drain Current 6.2 A, Drain Source Resistance 430 to 570 milli-ohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 2.5 V. Tags: Surface Mount. More details for FDD7N25LZTM can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDD7N25LZTM
  • Manufacturer
    onsemi
  • Description
    250 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.2 A
  • Drain Source Resistance
    430 to 570 milli-ohm
  • Drain Source Breakdown Voltage
    250 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 2.5 V
  • Gate Charge
    12 to 16 nC
  • Power Dissipation
    56 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    D-PAK
  • Applications
    LCD/LED/PDP TV, Consumer Appliances, Lighting, Uninterruptible Power Supply, AC-DC Power Supply

Technical Documents
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