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FDD8424H

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FDD8424H Image

The FDD8424H from onsemi is a MOSFET with Continous Drain Current -20 to 20 A, Drain Source Resistance 24 to 54 milliohm, Drain Source Breakdown Voltage -40 to 40 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 to 3 V. Tags: Surface Mount. More details for FDD8424H can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDD8424H
  • Manufacturer
    onsemi
  • Description
    -40 to 40 V, N-Channel, P-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -20 to 20 A
  • Drain Source Resistance
    24 to 54 milliohm
  • Drain Source Breakdown Voltage
    -40 to 40 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 to 3 V
  • Gate Charge
    14 to 24 nC
  • Power Dissipation
    30 to 35 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-5
  • Applications
    Invertre, H Bridge

Technical Documents
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