1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FDD86326

FDD86326

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

FDD86326 Image

The FDD86326 from onsemi is a MOSFET with Continous Drain Current 37 A, Drain Source Resistance 23 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDD86326 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDD86326
  • Manufacturer
    onsemi
  • Description
    80 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    37 A
  • Drain Source Resistance
    23 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    7.6 to 19 nC
  • Power Dissipation
    62 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    DC-DC conversion

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products