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FDD8N50NZ

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FDD8N50NZ Image

The FDD8N50NZ from onsemi is a MOSFET with Continous Drain Current 6.5 A, Drain Source Resistance 850 milliohm, Drain Source Breakdown Voltage 500 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 5 V. Tags: Surface Mount. More details for FDD8N50NZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDD8N50NZ
  • Manufacturer
    onsemi
  • Description
    500 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.5 A
  • Drain Source Resistance
    850 milliohm
  • Drain Source Breakdown Voltage
    500 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    14 to 18 nC
  • Power Dissipation
    90 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    DPAK-3 / TO-252-3
  • Applications
    LCD/LED/PDP TV, Lighting, Uninterruptible Power Supply, AC-DC Power Supply

Technical Documents
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