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FDFMA2P029Z-F106

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The FDFMA2P029Z-F106 from onsemi is a MOSFET with Continous Drain Current -3.1 A, Drain Source Resistance 60 to 140 milli-ohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.5 to -0.6 V. Tags: Surface Mount. More details for FDFMA2P029Z-F106 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDFMA2P029Z-F106
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -3.1 A
  • Drain Source Resistance
    60 to 140 milli-ohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.5 to -0.6 V
  • Gate Charge
    7 to 10 nC
  • Power Dissipation
    1.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-6

Technical Documents
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