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FDG6308P

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FDG6308P Image

The FDG6308P from onsemi is a MOSFET with Continous Drain Current -0.6 A, Drain Source Resistance 270 to 560 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.5 V. Tags: Surface Mount. More details for FDG6308P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDG6308P
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    -0.6 A
  • Drain Source Resistance
    270 to 560 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.5 V
  • Gate Charge
    1.8 to 2.5 nC
  • Power Dissipation
    0.3 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SC-88-6 / SC-70-6 / SOT-363-6
  • Applications
    Battery management, Load switch

Technical Documents
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