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FDI045N10A-F102

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The FDI045N10A-F102 from onsemi is a MOSFET with Continous Drain Current 164 A, Drain Source Resistance 3.8 to 4.5 milli-ohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FDI045N10A-F102 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDI045N10A-F102
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    164 A
  • Drain Source Resistance
    3.8 to 4.5 milli-ohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    54 to 74 nC
  • Power Dissipation
    263 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    I2PAK
  • Applications
    Synchronous Rectification for ATX / Server / Telecom PSU, Battery Protection Circuit, Motor Drives and Uninterruptible Power Supplies, Micro Solar Inverter

Technical Documents
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