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FDMA410NZT-F130

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The FDMA410NZT-F130 from onsemi is a MOSFET with Continous Drain Current 9.5 A, Drain Source Resistance 14 to 60 milli-ohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage 0.4 to 1 V. Tags: Surface Mount. More details for FDMA410NZT-F130 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMA410NZT-F130
  • Manufacturer
    onsemi
  • Description
    20 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    9.5 A
  • Drain Source Resistance
    14 to 60 milli-ohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    0.4 to 1 V
  • Gate Charge
    10 to 14 nC
  • Power Dissipation
    2.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    UDFN-6
  • Applications
    Li-lon Battery Pack, Baseband Switch, Load Switch, DC-DC Conversion, Mobile Device Switching

Technical Documents
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