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FDMB3900AN

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FDMB3900AN Image

The FDMB3900AN from onsemi is a MOSFET with Continous Drain Current 7 A, Drain Source Resistance 23 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 V. Tags: Surface Mount. More details for FDMB3900AN can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMB3900AN
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    7 A
  • Drain Source Resistance
    23 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    7 to 17 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-8

Technical Documents
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