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FDMC5614P

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FDMC5614P Image

The FDMC5614P from onsemi is a MOSFET with Continous Drain Current -13.5 A, Drain Source Resistance 100 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 V. Tags: Surface Mount. More details for FDMC5614P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMC5614P
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -13.5 A
  • Drain Source Resistance
    100 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 V
  • Gate Charge
    15 to 20 nC
  • Power Dissipation
    42 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-8
  • Applications
    Power management, Load switch, Battery protection

Technical Documents
View details on the manufacturer's website
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