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FDMC6696P

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FDMC6696P Image

The FDMC6696P from onsemi is a MOSFET with Continous Drain Current -75 A, Drain Source Resistance 4.9 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.6 V. Tags: Surface Mount. More details for FDMC6696P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMC6696P
  • Manufacturer
    onsemi
  • Description
    -12 to 12 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -75 A
  • Drain Source Resistance
    4.9 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.6 V
  • Gate Charge
    50 to 109 nC
  • Power Dissipation
    40 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Load Switch, Battery Management, Power Management, Reverse Polarity Protection

Technical Documents
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