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FDMC8200S

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FDMC8200S Image

The FDMC8200S from onsemi is a MOSFET with Continous Drain Current 6 to 8.5 A, Drain Source Resistance 10 to 20 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 V. Tags: Surface Mount. More details for FDMC8200S can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMC8200S
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    6 to 8.5 A
  • Drain Source Resistance
    10 to 20 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    3.1 to 22 nC
  • Power Dissipation
    1.9 to 2.25 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-8
  • Applications
    Mobile computing, Mobile internet divices, General purpose point of Load

Technical Documents
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