FDMC86102L

Note : Your request will be directed to onsemi.

FDMC86102L Image

The FDMC86102L from onsemi is a MOSFET with Continous Drain Current 18 A, Drain Source Resistance 23 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 V. Tags: Surface Mount. More details for FDMC86102L can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDMC86102L
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    18 A
  • Drain Source Resistance
    23 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    7.3 to 22 nC
  • Power Dissipation
    41 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-8
  • Applications
    DC-DC conversion

Technical Documents

Latest MOSFETs

View more products