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FDMC86160ET100

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FDMC86160ET100 Image

The FDMC86160ET100 from onsemi is a MOSFET with Continous Drain Current 43 A, Drain Source Resistance 14 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDMC86160ET100 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMC86160ET100
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    43 A
  • Drain Source Resistance
    14 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    9.8 to 22 nC
  • Power Dissipation
    65 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Bridge topologies, Synchronics Rectifier

Technical Documents
View details on the manufacturer's website
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