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FDMD8260L

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FDMD8260L Image

The FDMD8260L from onsemi is a MOSFET with Continous Drain Current 15 A, Drain Source Resistance 5.8 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 V. Tags: Surface Mount. More details for FDMD8260L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMD8260L
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    15 A
  • Drain Source Resistance
    5.8 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    25 to 68 nC
  • Power Dissipation
    37 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-12
  • Applications
    Primary switch of half bridge converter for telecom, Moter bridge

Technical Documents
View details on the manufacturer's website
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