1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FDMD8630

FDMD8630

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

FDMD8630 Image

The FDMD8630 from onsemi is a MOSFET with Continous Drain Current 167 A, Drain Source Resistance 1 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 V. Tags: Surface Mount. More details for FDMD8630 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDMD8630
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    167 A
  • Drain Source Resistance
    1 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    46 to 142 nC
  • Power Dissipation
    43 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Isolated DC-DC Synchronous Rectifiers, Common Ground Load Switches

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products