FDMQ8203

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FDMQ8203 Image

The FDMQ8203 from onsemi is a MOSFET with Continous Drain Current N: 6.0, P: -6.0 A, Drain Source Resistance N: 110, P: 190 milliohm, Drain Source Breakdown Voltage -80 to 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -1 to 4 V. Tags: Surface Mount. More details for FDMQ8203 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMQ8203
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel, P-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    N: 6.0, P: -6.0 A
  • Drain Source Resistance
    N: 110, P: 190 milliohm
  • Drain Source Breakdown Voltage
    -80 to 100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -1 to 4 V
  • Gate Charge
    1.6 to 19 nC
  • Power Dissipation
    Q1: 22, Q2:37 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-12
  • Applications
    High-Efficiency Bridge Rectifiers

Technical Documents

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