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FDMQ86530L

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FDMQ86530L Image

The FDMQ86530L from onsemi is a MOSFET with Continous Drain Current 8 A, Drain Source Resistance 17.5 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 V. Tags: Surface Mount. More details for FDMQ86530L can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMQ86530L
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Quad
  • Continous Drain Current
    8 A
  • Drain Source Resistance
    17.5 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    11 to 33 nC
  • Power Dissipation
    22 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    WDFN-12
  • Applications
    Active Bridge

Technical Documents
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