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FDMS4D0N12C

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FDMS4D0N12C Image

The FDMS4D0N12C from onsemi is a MOSFET with Continous Drain Current 118 A, Drain Source Resistance 4 milliohm, Drain Source Breakdown Voltage 120 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDMS4D0N12C can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDMS4D0N12C
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    118 A
  • Drain Source Resistance
    4 milliohm
  • Drain Source Breakdown Voltage
    120 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    36 to 82 nC
  • Power Dissipation
    2.7 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Synchronous Rectification, AC-DC and DC-DC Power Supplies, AC-DC Adapters (USB PD) SR, Load Switch

Technical Documents
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