1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FDMS86150ET100

FDMS86150ET100

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

FDMS86150ET100 Image

The FDMS86150ET100 from onsemi is a MOSFET with Continous Drain Current 128 A, Drain Source Resistance 4.85 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDMS86150ET100 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDMS86150ET100
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    128 A
  • Drain Source Resistance
    4.85 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    25 to 62 nC
  • Power Dissipation
    187 W
  • Temperature operating range
    -55 to 175 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Primary DC-DC MOSFET, Secondary Synchronous Rectifier, Load Switch

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products