FDMS86252

Note : Your request will be directed to onsemi.

FDMS86252 Image

The FDMS86252 from onsemi is a MOSFET with Continous Drain Current 16 A, Drain Source Resistance 51 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4 V. Tags: Surface Mount. More details for FDMS86252 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDMS86252
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    16 A
  • Drain Source Resistance
    51 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4 V
  • Gate Charge
    6.1 to 15 nC
  • Power Dissipation
    69 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    DC-DC Conversion

Technical Documents

Latest MOSFETs

View more products