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FDN302P

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FDN302P Image

The FDN302P from onsemi is a MOSFET with Continous Drain Current -2.4 A, Drain Source Resistance 44 to 84 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.5 V. Tags: Surface Mount. More details for FDN302P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDN302P
  • Manufacturer
    onsemi
  • Description
    -12 to 12 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -2.4 A
  • Drain Source Resistance
    44 to 84 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.5 V
  • Gate Charge
    9 to 14 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    Battery management, Load switch, Battery protection

Technical Documents
View details on the manufacturer's website
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