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FDN338P

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FDN338P Image

The FDN338P from onsemi is a MOSFET with Continous Drain Current -1.6 A, Drain Source Resistance 88 to 165 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -8 to 8 V, Gate Source Threshold Voltage -1.5 V. Tags: Surface Mount. More details for FDN338P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDN338P
  • Manufacturer
    onsemi
  • Description
    -8 to 8 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.6 A
  • Drain Source Resistance
    88 to 165 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -8 to 8 V
  • Gate Source Threshold Voltage
    -1.5 V
  • Gate Charge
    4.4 to 6.2 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    Battery management, Load switch, Battery protection

Technical Documents
View details on the manufacturer's website
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