1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FDN359BN

FDN359BN

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

FDN359BN Image

The FDN359BN from onsemi is a MOSFET with Continous Drain Current 2.7 A, Drain Source Resistance 46 milliohm, Drain Source Breakdown Voltage 30 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 3 V. Tags: Surface Mount. More details for FDN359BN can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDN359BN
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    2.7 A
  • Drain Source Resistance
    46 milliohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    3 V
  • Gate Charge
    5 to 7 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products