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FDN5618P

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FDN5618P Image

The FDN5618P from onsemi is a MOSFET with Continous Drain Current -1.25 A, Drain Source Resistance 170 milliohm, Drain Source Breakdown Voltage -60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage -3 V. Tags: Surface Mount. More details for FDN5618P can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDN5618P
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -1.25 A
  • Drain Source Resistance
    170 milliohm
  • Drain Source Breakdown Voltage
    -60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    -3 V
  • Gate Charge
    8.6 to 13.8 nC
  • Power Dissipation
    0.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOT-23-3
  • Applications
    DC-DC converters, Load switch, Power management

Technical Documents
View details on the manufacturer's website
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