1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FDN5632N-F085

FDN5632N-F085

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The FDN5632N-F085 from onsemi is a MOSFET with Continous Drain Current 1.7 A, Drain Source Resistance 57 to 135 milli-ohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 1 to 3 V. Tags: Surface Mount. More details for FDN5632N-F085 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDN5632N-F085
  • Manufacturer
    onsemi
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    1.7 A
  • Drain Source Resistance
    57 to 135 milli-ohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    1 to 3 V
  • Gate Charge
    9.2 to 12 nC
  • Power Dissipation
    1.1 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Industrial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SSOT3
  • Applications
    Automotive, DC/DC converter, Motor Drives

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products