1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FDP023N08B-F102

FDP023N08B-F102

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The FDP023N08B-F102 from onsemi is a MOSFET with Continous Drain Current 242 A, Drain Source Resistance 1.96 to 2.35 milli-ohm, Drain Source Breakdown Voltage 75 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 3.5 V. Tags: Through Hole. More details for FDP023N08B-F102 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDP023N08B-F102
  • Manufacturer
    onsemi
  • Description
    75 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    242 A
  • Drain Source Resistance
    1.96 to 2.35 milli-ohm
  • Drain Source Breakdown Voltage
    75 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 3.5 V
  • Gate Charge
    150 to 195 nC
  • Power Dissipation
    245 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Synchronous Rectification for ATX / Server / Telecom PSU, Battery Protection Circuit, DC motor Drives and Uninterruptible Power Supplies, Micro Solar Inverter

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products