1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FDP027N08B-F102

FDP027N08B-F102

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The FDP027N08B-F102 from onsemi is a MOSFET with Continous Drain Current 223 A, Drain Source Resistance 2.21 to 2.7 milli-ohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for FDP027N08B-F102 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDP027N08B-F102
  • Manufacturer
    onsemi
  • Description
    80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    223 A
  • Drain Source Resistance
    2.21 to 2.7 milli-ohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    137 to 178 nC
  • Power Dissipation
    246 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Commercial, Industrial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Synchronous Rectification for ATX / Server / Telecom PSU, Battery Protection Circuit, Motor Drives and Uninterruptible Power Supplies

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products