1. everything PE
  2. Power Electronics
  3. Power Transistors
  4. MOSFETs
  5. onsemi
  6. FDP050AN06A0

FDP050AN06A0

Download Datasheet Request Quote

Note : Your request will be directed to onsemi.

The FDP050AN06A0 from onsemi is a MOSFET with Continous Drain Current 80 A, Drain Source Resistance 4.3 to 11 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FDP050AN06A0 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    FDP050AN06A0
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    80 A
  • Drain Source Resistance
    4.3 to 11 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    61 to 80 nC
  • Power Dissipation
    245 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Synchronous Rectification for ATX / Server / Telecom PSU, Battery Protection Circuit, Motor Drives, Uninterruptible Power Supplies, Renewable System

Technical Documents
View details on the manufacturer's website
View similar products

Latest MOSFETs

View more products