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FDP053N08B

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The FDP053N08B from onsemi is a MOSFET with Continous Drain Current 120 A, Drain Source Resistance 4.2 to 5.3 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Through Hole. More details for FDP053N08B can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDP053N08B
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    120 A
  • Drain Source Resistance
    4.2 to 5.3 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    65.4 to 85 nC
  • Power Dissipation
    146 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Synchronous Rectification for ATX / Server / Telecom PSU, Battery Protection Circuit, Motor Drives, Uninterruptible Power Supplies

Technical Documents
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