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FDP2532

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The FDP2532 from onsemi is a MOSFET with Continous Drain Current 79 A, Drain Source Resistance 14 to 48 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FDP2532 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDP2532
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 150 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    79 A
  • Drain Source Resistance
    14 to 48 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    82 to 107 nC
  • Power Dissipation
    310 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Consumer Appliances, Synchronous Rectification, Battery Protection Circuit, Motor Drives, Uninterruptible Power Supplies, Micro Solar Inverters

Technical Documents
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