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FDP61N20

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The FDP61N20 from onsemi is a MOSFET with Continous Drain Current 61 A, Drain Source Resistance 34 to 41 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for FDP61N20 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDP61N20
  • Manufacturer
    onsemi
  • Description
    -30 to 30 V, 200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    61 A
  • Drain Source Resistance
    34 to 41 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    58 to 75 nC
  • Power Dissipation
    417 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    PDP TV, Lighting, Uninterruptible Power Supplies, AC-DC Power Supply

Technical Documents
View details on the manufacturer's website
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