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FDP86363_F085

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The FDP86363_F085 from onsemi is a MOSFET with Continous Drain Current 110 A, Drain Source Resistance 2.4 to 4.3 milliohm, Drain Source Breakdown Voltage 80 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for FDP86363_F085 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDP86363_F085
  • Manufacturer
    onsemi
  • Description
    -20 to 20 V, 80 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    110 A
  • Drain Source Resistance
    2.4 to 4.3 milliohm
  • Drain Source Breakdown Voltage
    80 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    131 to 150 nC
  • Power Dissipation
    300 W
  • Temperature operating range
    -55 to 175 Degree C
  • Industry
    Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220
  • Applications
    Automotive Engine Control, Powertrain Management, Solenoid and Motor Drivers, ? Integrated Starter/alternator, Primary Switch for 12V Systems

Technical Documents
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