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FDPC8012S

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The FDPC8012S from onsemi is a MOSFET with Continous Drain Current 13 to 88 A, Drain Source Resistance 1.6 to 10.5 milliohm, Drain Source Breakdown Voltage 25 V, Gate Source Voltage 12 V, Gate Source Threshold Voltage 0.8 to 2.2 V. Tags: Surface Mount. More details for FDPC8012S can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDPC8012S
  • Manufacturer
    onsemi
  • Description
    12 V, 25 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    13 to 88 A
  • Drain Source Resistance
    1.6 to 10.5 milliohm
  • Drain Source Breakdown Voltage
    25 V
  • Gate Source Voltage
    12 V
  • Gate Source Threshold Voltage
    0.8 to 2.2 V
  • Gate Charge
    8 to 25 nC
  • Power Dissipation
    0.8 to 2 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PQFN-8
  • Applications
    Computing, Communications, General Purpose Point of Load

Technical Documents
View details on the manufacturer's website
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