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FDPF3860T

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FDPF3860T Image

The FDPF3860T from onsemi is a MOSFET with Continous Drain Current 20 A, Drain Source Resistance 38.2 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 4.5 V. Tags: Through Hole. More details for FDPF3860T can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDPF3860T
  • Manufacturer
    onsemi
  • Description
    100 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20 A
  • Drain Source Resistance
    38.2 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    4.5 V
  • Gate Charge
    23 to 35 nC
  • Power Dissipation
    33.8 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220-3 FullPak
  • Applications
    Consumer appliances, LEC/LED/PDP TV, Synchronous rectification, Battery protection circuit, Moter drive, UPS

Technical Documents
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