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FDPF8N60ZUT

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FDPF8N60ZUT Image

The FDPF8N60ZUT from onsemi is a MOSFET with Continous Drain Current 6.5 A, Drain Source Resistance 1350 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 5 V. Tags: Through Hole. More details for FDPF8N60ZUT can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDPF8N60ZUT
  • Manufacturer
    onsemi
  • Description
    600 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    6.5 A
  • Drain Source Resistance
    1350 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    20 to 26 nC
  • Power Dissipation
    34.5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220-3 FullPak
  • Applications
    LCD/LED/PDP TV, Lighting, UPS, AC-DC power supply

Technical Documents
View details on the manufacturer's website
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