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FDS6576

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FDS6576 Image

The FDS6576 from onsemi is a MOSFET with Continous Drain Current -11 A, Drain Source Resistance 8.2 to 23 milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.5 V. Tags: Surface Mount. More details for FDS6576 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDS6576
  • Manufacturer
    onsemi
  • Description
    -20 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -11 A
  • Drain Source Resistance
    8.2 to 23 milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.5 V
  • Gate Charge
    43 to 60 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8
  • Applications
    Power management, Load switch, Battery protection

Technical Documents
View details on the manufacturer's website
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