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FDS6673BZ

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The FDS6673BZ from onsemi is a MOSFET with Continous Drain Current -14.5 A, Drain Source Resistance 7.8 milliohm, Drain Source Breakdown Voltage -30 V, Gate Source Voltage -25 to 25 V, Gate Source Threshold Voltage -3 V. Tags: Surface Mount. More details for FDS6673BZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDS6673BZ
  • Manufacturer
    onsemi
  • Description
    -30 V, P-Channel MOSFET

General

  • Types of MOSFET
    P-Channel Enhancement Mode
  • Transistor Polarity
    P-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    -14.5 A
  • Drain Source Resistance
    7.8 milliohm
  • Drain Source Breakdown Voltage
    -30 V
  • Gate Source Voltage
    -25 to 25 V
  • Gate Source Threshold Voltage
    -3 V
  • Gate Charge
    46 to 124 nC
  • Power Dissipation
    2.5 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8

Technical Documents
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