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FDS6898AZ

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The FDS6898AZ from onsemi is a MOSFET with Continous Drain Current 9.4 A, Drain Source Resistance 10 to 21 milliohm, Drain Source Breakdown Voltage 20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage 1.5 V. Tags: Surface Mount. More details for FDS6898AZ can be seen below.

Product Specifications

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Product Details

  • Part Number
    FDS6898AZ
  • Manufacturer
    onsemi
  • Description
    20 V, N-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    9.4 A
  • Drain Source Resistance
    10 to 21 milliohm
  • Drain Source Breakdown Voltage
    20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    1.5 V
  • Gate Charge
    16 to 23 nC
  • Power Dissipation
    2 W
  • Temperature operating range
    -55 to 150 ºC
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOIC-8

Technical Documents
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